vishay semiconductors VLMD31.. document number 81351 rev. 1.3, 09-may-08 www.vishay.com 1 standard smd led plcc-2 description this device has been designed for applications requiring narrow brightness and color selection. the package of this device is the plcc-2. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 features ? smd led with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with ir reflow, vapor phase and wave solder processes according to cecc 00802 and j-std-020c ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? low power consumption ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec ? luminous intensity ratio in one packaging unit i vmax /i vmin 1.6 ? lead (pb)-free device ? preconditioning: a cc. to jedec level 2a ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use 94 8 553 e3 parts table part color, luminous intensity technology VLMD3100-gs08 red, i v > 11.2 mcd gaalas on gaas VLMD3100-gs18 red, i v > 11.2 mcd gaalas on gaas VLMD3101-gs08 red, i v = (18 to 45) mcd gaalas on gaas VLMD3101-gs18 red, i v = (18 to 45) mcd gaalas on gaas VLMD3105-gs08 red, i v = (11.2 to 28) mcd gaalas on gaas VLMD3105-gs18 red, i v = (11.2 to 28) mcd gaalas on gaas VLMD31l2n1-gs08 red, i v = (14 to 35.5) mcd gaalas on gaas VLMD31l2n1-gs18 red, i v = (14 to 35.5) mcd gaalas on gaas VLMD31l2p1-gs08 red, i v = (14 to 56) mcd gaalas on gaas VLMD31l2p1-gs18 red, i v = (14 to 56) mcd gaalas on gaas VLMD31m2p1-gs08 red, i v = (22.4 to 56) mcd gaalas on gaas VLMD31m2p1-gs18 red, i v = (22.4 to 56) mcd gaalas on gaas
www.vishay.com 2 document number 81351 rev. 1.3, 09-may-08 vishay semiconductors VLMD31.. note: 1) t amb = 25 c, unless otherwise specified 2) driving led in reverse direction is suitable for short term application note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixi ng of two groups on each reel). in order to ensure availability, single brightness groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavel ength groups will be shipped on any one reel. in order to ensure availability, single wavelength groups will not be orderable. absolute maximum ratings 1) VLMD31.. parameter test condition symbol value unit reverse voltage 2) v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.5 a power dissipation p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) VLMD31.., red parameter test condition part symbol min. typ. max. unit luminous intensity 2) i f = 10 ma VLMD3100 i v 11.2 mcd VLMD3101 i v 18 45 mcd VLMD3105 i v 11.2 28 mcd VLMD31l2n1 i v 14 35.5 mcd VLMD31l2p1 i v 14 56 mcd VLMD31m2p1 i v 22.4 56 mcd dominant wavelength i f = 10 ma d 648 nm peak wavelength i f = 10 ma p 650 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 1.8 2.2 v reverse voltage i r = 10 a v r 6v junction capacitance v r = 0, f = 1 mhz c j 7pf temperature coefficient of v f i f = 20 ma tc vf - 1.8 mv/k temperature coefficient of d i f = 10 ma tc d 0.05 nm/k luminous intensity classification group light intensity (mcd) standard optional min. max. j 1 4.5 5.6 2 5.6 7.1 k 1 7.1 9 2 9 11.2 l 1 11.2 14 2 14 18 m 1 18 22.4 2 22.4 28 n 1 28 35.5 2 35.5 45 p 1 45 56 crossing table vishay osram VLMD31l2n1 lht674-l2n1 VLMD31l2p1 lht674-l2p1 VLMD31m2p1 lht674-m2p1
document number 81351 rev. 1.3, 09-may-08 www.vishay.com 3 vishay semiconductors VLMD31.. typical characteristics t amb = 25 c, unless otherwise specified figure 1. max. permissible forward current vs. ambient temperature figure 2. permissible pulse forw ard current vs. pulse length figure 3. rel. luminous intensity vs. angular displacement 0 10 20 30 40 60 i f - for w ard c u rrent (ma) 95 10905 50 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 0.01 0.1 1 10 1 10 100 1000 10000 t p - p u lse length (ms) 100 95 99 8 5 i - for w ard c u rrent (ma) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t am b < 60 c 0.4 0.2 0 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity ? - ang u lar displacement figure 4. relative luminous intensity vs. wavelength figure 5. forward current vs. forward voltage figure 6. relative luminous intensity vs. forward current 600 620 640 660 6 8 0 0 0.2 0.4 0.6 0. 8 1.2 700 95 1001 8 i rel - relati v e l u mino u s intensity - w a v elength (nm) 1.0 red 1 10 100 95 10014 1 1.5 2 2.5 3 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) red 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 1663 8 i v rel - relati v e l u mino u s intensity s u per red
www.vishay.com 4 document number 81351 rev. 1.3, 09-may-08 vishay semiconductors VLMD31.. package dimensions in millimeters figure 7. rel. luminous intensity vs. ambient temperature figure 8. change of dominant wavelength vs. ambient temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0 204060 8 0 100 t am b - am b ient temperat u re (c) 16635 i v rel - relati v e l u mino u s intensity s u per red - 3 - 2 - 1 0 1 2 3 4 5 0 204060 8 0 100 t am b - am b ient temperat u re (c) 16637 - change of dom. w a v elength (nm) d figure 9. change of forward volt age vs. ambient temperature - 300 - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 0204060 8 0 100 t am b - am b ient temperat u re (c) 16636 v - change of for w ard v oltage (m v ) f 20415 mounting pad layout 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist
document number 81351 rev. 1.3, 09-may-08 www.vishay.com 5 vishay semiconductors VLMD31.. method of taping/polarity and tape and reel smd led (vlm.3-series) vishay?s leds in smd pack ages are available in an antistatic 8 mm blister tape (in accordance with din iec 40 (co) 564) for automatic component insertion. the blister tape is a plastic strip with impressed component cavities, covered by a top tape. taping of VLMD31.. reel package dimension in mm for smd leds, tape option gs08 (= 1500 pcs.) reel package dimension in mm for smd leds, tape option gs18 (= 8000 pcs.) preferred soldering profile figure 10. tape dimensions in mm for plcc-2 figure 11. reel dimensions - gs08 adhesi v e tape component ca v ity blister tape 94 8 670 0.25 2.2 2.0 1. 8 5 1.65 4.1 3.9 2.05 1.95 3.5 3.1 4.1 3.9 1.6 1.4 8 .3 7.7 5.75 5.25 3.6 3.4 4.0 3.6 16 025 anode cathode 1 8 0 17 8 identification 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8 665 la b el: v ishay type gro u p tape code prod u ction code q u antity figure 12. reel dimensions - gs18 figure 13. vishay lead (pb)-fre e reflow soldering profile (acc. to j-std-020c) figure 14. double wave soldering of opto devices (all packages) 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8 .4 120 1 88 57 la b el: v ishay type gro u p tape code prod u ction code q u antity 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c 235 c to 260 c 2 k/s ca. 200 k/s ca. 2 k/s second w a v e first w a v e ca. 5 k/s 5 s f u ll line: typical dotted line: process limits time (s) temperat u re (c) lead t emperat u re 300 250 200 150 100 50 0 0 100 150 200 250 94 8 626-1 tt w soldering (acc. to cecc00 8 02) 50 100 c to 130 c forced cooling
www.vishay.com 6 document number 81351 rev. 1.3, 09-may-08 vishay semiconductors VLMD31.. bar code product label a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: l2 = code for luminous intensity group d) date code year/week e) day code (e.g. 3: wednesday) f) batch no. g) total quantity h) company code dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moistu re absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. 106 37 v ishay a h bc d e f g 20162 al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
vishay semiconductors VLMD31.. document number 81351 rev. 1.3, 09-may-08 www.vishay.com 7 ozone depletin g substances po licy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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